N-channel power MOSFET featuring 80V drain-source voltage and 45A continuous drain current. Offers low on-state resistance of 13.5mΩ at 10Vgs. Designed for surface mounting in a TO-252-3 package, this silicon metal-oxide semiconductor FET operates from -55°C to 175°C with a maximum power dissipation of 79W. Includes fast switching characteristics with a fall time of 5ns.
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Infineon IPD135N08N3GATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 45A |
| Drain to Source Resistance | 11.4mR |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.73nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 80V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 79W |
| Mount | Surface Mount |
| On-State Resistance | 13.5mR |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Power Dissipation | 79W |
| Radiation Hardening | No |
| Rds On Max | 13.5mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 12ns |
| RoHS | Compliant |
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