N-channel MOSFET, 100V drain-source breakdown voltage, 53A continuous drain current, and 16mΩ drain-source on-resistance. Features a 100W maximum power dissipation and operates within a -55°C to 175°C temperature range. Surface mountable in a TO-252 package, this component offers fast switching with turn-on delay of 15ns and fall time of 7ns. RoHS compliant.
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Infineon IPD16CN10NG technical specifications.
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 53A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.22nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Surface Mount |
| Nominal Vgs | 3V |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Rds On Max | 16mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 15ns |
| RoHS | Compliant |
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