N-channel power MOSFET featuring 100V drain-source voltage and 43A continuous drain current. This silicon, metal-oxide semiconductor field-effect transistor offers a low 18mΩ Rds On resistance and 1.8nF input capacitance. Designed for surface mount applications in a TO-252-3 package, it operates from -55°C to 175°C with a maximum power dissipation of 71W. The component is RoHS compliant and supplied on tape and reel.
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
Infineon IPD180N10N3GATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 43A |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 1.8nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 71W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 18mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD180N10N3GATMA1 Datasheet
Download the complete datasheet for Infineon IPD180N10N3GATMA1 to view detailed technical specifications.
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