The IPD180N10N3GBTMA1 is a 100V N-channel MOSFET from Infineon, featuring a continuous drain current of 43A and a maximum operating temperature of 175°C. It is packaged in a TO-252 case and is designed for surface mount applications. The device is RoHS compliant but contains lead, and is not halogen free. It has a maximum power dissipation of 71W and a threshold voltage of 2.7V.
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Infineon IPD180N10N3GBTMA1 technical specifications.
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 43A |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 71W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 71W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2.7V |
| RoHS | Compliant |
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