The IPD180N10N3GBTMA1 is a 100V N-channel MOSFET from Infineon, featuring a continuous drain current of 43A and a maximum operating temperature of 175°C. It is packaged in a TO-252 case and is designed for surface mount applications. The device is RoHS compliant but contains lead, and is not halogen free. It has a maximum power dissipation of 71W and a threshold voltage of 2.7V.
PackageTO-252
MountingSurface Mount
Power71W
Quick Jump:
Technical Specifications
Infineon IPD180N10N3GBTMA1 technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 43A |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 71W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 71W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2.7V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD180N10N3GBTMA1 Datasheet
Download the complete datasheet for Infineon IPD180N10N3GBTMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
