N-Channel Power MOSFET, 150V Vdss, 50A continuous drain current, and 20mΩ Rds(on). This silicon, metal-oxide semiconductor FET features a TO-252-3 surface mount package, 150W power dissipation, and operates from -55°C to 175°C. It offers a 6ns fall time and 14ns turn-on delay time, with 1.82nF input capacitance. RoHS compliant and halogen-free.
PackageTO-252-3
MountingSurface Mount
Power150W
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Technical Specifications
Infineon IPD200N15N3GATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.82nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 150V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 20mR |
| Package Quantity | 2500 |
| Packaging | Cut Tape |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 20mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 14ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD200N15N3GATMA1 Datasheet
Download the complete datasheet for Infineon IPD200N15N3GATMA1 to view detailed technical specifications.
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