Power Field-Effect Transistor, 30A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC PACKAGE-3
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Infineon IPD20N03L technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 30A |
| Current Rating | 30A |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | 30V |
| Input Capacitance | 700pF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Surface Mount |
| Nominal Vgs | 1.6V |
| Packaging | Tape and Reel |
| Rds On Max | 20mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Series | OptiMOS™ |
| Termination | SMD/SMT |
| Threshold Voltage | 1.6V |
| DC Rated Voltage | 30V |
| RoHS | Not Compliant |
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