N-channel power MOSFET featuring 75V drain-source breakdown voltage and 27A continuous drain current. This silicon metal-oxide semiconductor FET offers a low on-state resistance of 50mΩ and a maximum power dissipation of 75W. Designed for high-efficiency switching applications, it operates within a temperature range of -55°C to 175°C and is packaged in a TO-252-3 plastic package. Key switching characteristics include a 6ns turn-on delay and a 10ns fall time.
PackageTO-252-3
PolarityN-CHANNEL
Power75W
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Technical Specifications
Infineon IPD22N08S2L50ATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 27A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Voltage (Vdss) | 75V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 2.41mm |
| Input Capacitance | 630pF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Dual Supply Voltage | 75V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| On-State Resistance | 50mR |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 75W |
| Rds On Max | 50mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 6ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD22N08S2L50ATMA1 Datasheet
Download the complete datasheet for Infineon IPD22N08S2L50ATMA1 to view detailed technical specifications.
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