The IPD25CN10NGATMA1 is a surface mount N-channel MOSFET from Infineon with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It features a maximum power dissipation of 71W and a maximum drain to source voltage of 100V. The device has a continuous drain current of 35A and a maximum Rds On of 25mΩ. It is packaged in a TO-252-3 package and is RoHS compliant.
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Infineon IPD25CN10NGATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.07nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 71W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 71W |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 10ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPD25CN10NGATMA1 to view detailed technical specifications.
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