The IPD25CNE8NG is a surface mount N-CHANNEL MOSFET from Infineon with a maximum operating temperature range of -55°C to 175°C. It has a maximum power dissipation of 71W and a continuous drain current of 35A. The device features a drain to source breakdown voltage of 85V and a drain to source resistance of 25mR. It is packaged in a TO-252-3 package and is RoHS compliant.
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Infineon IPD25CNE8NG technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Breakdown Voltage | 85V |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | 85V |
| Fall Time | 3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.07nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 71W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 71W |
| Rds On Max | 25mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 13ns |
| RoHS | Compliant |
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