N-Channel Power MOSFET featuring 60V Drain to Source Breakdown Voltage and 30mΩ Rds On. This component offers a continuous drain current of 25A and a maximum power dissipation of 29W. Designed for efficient switching, it exhibits a fall time of 2ns and turn-on delay time of 6ns. Packaged in a TO-252-3 case, it operates across a wide temperature range from -55°C to 175°C and is RoHS compliant.
PackageTO-252-3
PolarityN-CHANNEL
Power29W
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Technical Specifications
Infineon IPD25N06S4L-30 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 30mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 2ns |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Height | 2.3mm |
| Input Capacitance | 1.22nF |
| Length | 6.5mm |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 29W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 29W |
| Rds On Max | 30mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 6ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD25N06S4L-30 Datasheet
Download the complete datasheet for Infineon IPD25N06S4L-30 to view detailed technical specifications.
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