The IPD25N06S4L30ATMA2 is a 25A 60V N-Channel MOSFET from Infineon, packaged in a TO-252-3 surface mount package. It has a maximum operating temperature range of -55°C to 175°C and is RoHS compliant. The device has a maximum power dissipation of 29W and an on-state resistance of 30mR. It is part of the OptiMOS series and is available in quantities of 2500 in cut tape packaging.
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Infineon IPD25N06S4L30ATMA2 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Resistance | 23mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 2ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 1.22nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 29W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 30mR |
| Package Quantity | 2500 |
| Packaging | Cut Tape |
| Power Dissipation | 29W |
| Rds On Max | 30mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 6ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPD25N06S4L30ATMA2 to view detailed technical specifications.
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