N-Channel Power MOSFET, 55V Vdss, 30A continuous drain current. Features low on-state resistance of 35mΩ (Rds On Max) and 27mΩ (Drain to Source Resistance). Operates with a gate-source voltage up to 20V and a maximum power dissipation of 68W. This silicon, metal-oxide semiconductor FET is housed in a TO-252-3 surface-mount package, suitable for tape and reel packaging. Offers fast switching characteristics with a turn-on delay time of 5ns and fall time of 11ns.
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Infineon IPD26N06S2L35ATMA2 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Resistance | 27mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 621pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 68W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 35mR |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Power Dissipation | 68W |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 5ns |
| RoHS | Compliant |
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