N-Channel Power MOSFET, 30V Vds, 30A continuous drain current, and 10mΩ maximum on-state resistance. This silicon Metal-Oxide-Semiconductor FET features a TO-252 package, 100W maximum power dissipation, and operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a 7ns turn-on delay and 10ns fall time. The component is RoHS compliant and Halogen Free.
PackageTO-252-3
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Technical Specifications
Infineon IPD30N03S2L10ATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 2.41mm |
| Input Capacitance | 1.2nF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Number of Channels | 1 |
| On-State Resistance | 10mR |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Rds On Max | 10mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 29ns |
| Turn-On Delay Time | 7ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD30N03S2L10ATMA1 Datasheet
Download the complete datasheet for Infineon IPD30N03S2L10ATMA1 to view detailed technical specifications.
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