N-Channel Power MOSFET, TO-252 package, featuring 30V drain-source voltage and 30A continuous drain current. Achieves low on-state resistance of 9mΩ at a 10V gate-source voltage. Offers fast switching speeds with a 3ns turn-on delay and 5ns fall time. Designed for high-temperature operation up to 175°C, with a maximum power dissipation of 42W. Halogen-free and RoHS compliant.
PackageTO-252-3
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Technical Specifications
Infineon IPD30N03S4L09ATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Height | 2.3mm |
| Input Capacitance | 1.52nF |
| Lead Free | Contains Lead |
| Length | 6.5mm |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Number of Channels | 1 |
| On-State Resistance | 9mR |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 9mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 3ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD30N03S4L09ATMA1 Datasheet
Download the complete datasheet for Infineon IPD30N03S4L09ATMA1 to view detailed technical specifications.
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