The IPD30N03S4L14ATMA1 is a 30V 30A N-Channel MOSFET from Infineon, packaged in a TO-252-3 surface mount package. It features a maximum power dissipation of 31W and a maximum operating temperature range of -55°C to 175°C. The device is RoHS compliant and halogen free, but contains lead. It has a maximum dual supply voltage of 30V and a maximum gate to source voltage of 16V.
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Infineon IPD30N03S4L14ATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Input Capacitance | 980pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 31W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 13.6mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 3ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPD30N03S4L14ATMA1 to view detailed technical specifications.
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