N-channel power MOSFET featuring 55V drain-source breakdown voltage and 30A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 14.7mΩ on-state resistance and 136W maximum power dissipation. Designed for efficient switching, it exhibits a 13ns turn-on delay and 19ns fall time. Packaged in a halogen-free TO-252-3 case, this RoHS compliant component operates from -55°C to 175°C.
PackageTO-252-3
PolarityN-CHANNEL
Power136W
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Technical Specifications
Infineon IPD30N06S215ATMA2 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 2.3mm |
| Input Capacitance | 1.485nF |
| Lead Free | Contains Lead |
| Length | 6.5mm |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 136W |
| On-State Resistance | 14.7mR |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 136W |
| Radiation Hardening | No |
| Rds On Max | 14.7mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 13ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD30N06S215ATMA2 Datasheet
Download the complete datasheet for Infineon IPD30N06S215ATMA2 to view detailed technical specifications.
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