N-channel power MOSFET featuring 55V drain-source breakdown voltage and 30A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 23mΩ drain-source resistance (Rds On Max) and 100W power dissipation. Designed for high-efficiency switching applications, it operates across a wide temperature range from -55°C to 175°C. The TO-252-3 package provides compact integration with fast switching characteristics, including 10ns turn-on delay and 18ns fall time.
PackageTO-252-3
PolarityN-CHANNEL
Power100W
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Technical Specifications
Infineon IPD30N06S223ATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 23mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 2.41mm |
| Input Capacitance | 901pF |
| Length | 6.73mm |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Rds On Max | 23mR |
| RoHS Compliant | No |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 10ns |
| Width | 6.22mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon IPD30N06S223ATMA1 Datasheet
Download the complete datasheet for Infineon IPD30N06S223ATMA1 to view detailed technical specifications.
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