N-channel power MOSFET featuring 55V drain-source breakdown voltage and 30A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 23mΩ drain-source resistance (Rds On Max) and 100W power dissipation. Designed for high-efficiency switching applications, it operates across a wide temperature range from -55°C to 175°C. The TO-252-3 package provides compact integration with fast switching characteristics, including 10ns turn-on delay and 18ns fall time.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IPD30N06S223ATMA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IPD30N06S223ATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 23mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 2.41mm |
| Input Capacitance | 901pF |
| Length | 6.73mm |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Rds On Max | 23mR |
| RoHS Compliant | No |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 10ns |
| Width | 6.22mm |
| RoHS | Not Compliant |
Download the complete datasheet for Infineon IPD30N06S223ATMA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
