N-channel Power MOSFET featuring 55V drain-source breakdown voltage and 30A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 17mΩ Rds On and 136W maximum power dissipation. Designed for demanding applications, it operates across a wide temperature range from -55°C to 175°C and is packaged in a TO-252-3 case. Key switching characteristics include a 1.8nF input capacitance, 16ns turn-on delay, and 21ns fall time.
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Infineon IPD30N06S2L13ATMA4 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 30A |
| Current | 30A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 2.41mm |
| Input Capacitance | 1.8nF |
| Length | 6.73mm |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 136W |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 136W |
| Radiation Hardening | No |
| Rds On Max | 13mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 1.6V |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 16ns |
| Voltage | 55V |
| Width | 6.22mm |
| RoHS | Compliant |
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