N-channel power MOSFET featuring 55V drain-source breakdown voltage and 30A continuous drain current. Offers low 23mΩ on-state resistance and 100W power dissipation. This silicon, metal-oxide semiconductor FET is housed in a TO-252 package, suitable for applications requiring efficient power switching. Key electrical characteristics include a 1.6V threshold voltage and fast switching times with a 7ns turn-on delay.
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Infineon IPD30N06S2L23ATMA3 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 23mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 2.3mm |
| Input Capacitance | 1.091nF |
| Lead Free | Contains Lead |
| Length | 6.5mm |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Number of Elements | 1 |
| On-State Resistance | 23mR |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Radiation Hardening | No |
| Rds On Max | 23mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 1.6V |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 7ns |
| Width | 6.22mm |
| RoHS | Compliant |
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