N-Channel Power MOSFET, 60V Vdss, 30A Continuous Drain Current, and 23mΩ On-State Resistance. This single-element silicon Metal-oxide Semiconductor FET features a TO-252 package, surface mount capability, and a maximum power dissipation of 36W. Operating across a wide temperature range from -55°C to 175°C, it offers fast switching with turn-on and turn-off delay times of 4ns and 15ns respectively, and a fall time of 3ns. This RoHS compliant component is designed for automotive applications and meets AEC-Q101 standards.
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Infineon IPD30N06S4L23ATMA2 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Resistance | 23mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 3ns |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Height | 2.41mm |
| Input Capacitance | 1.56nF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 36W |
| Mount | Surface Mount |
| On-State Resistance | 23mR |
| Package Quantity | 2500 |
| Packaging | Cut Tape |
| Power Dissipation | 36W |
| Rds On Max | 23mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 4ns |
| Width | 6.22mm |
| RoHS | Compliant |
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