The IPD30N08S222ATMA1 is a 30A 75V N-Channel MOSFET from Infineon, packaged in a TO-252-3 surface mount package. It has a maximum power dissipation of 136W and operates over a temperature range of -55°C to 175°C. The device is RoHS compliant and features a maximum input capacitance of 1.4nF and a maximum Rds On of 21.5mR. It is part of the OptiMOS series and is halogen free.
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
Infineon IPD30N08S222ATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 75V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.4nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 75V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 136W |
| Mount | Surface Mount |
| Rds On Max | 21.5mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 13ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD30N08S222ATMA1 Datasheet
Download the complete datasheet for Infineon IPD30N08S222ATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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