N-Channel Power MOSFET featuring 75V drain-source voltage and 30A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.026ohm. Encased in a GREEN, TO-252 plastic package, it utilizes a single element design with two terminals.
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Technical Specifications
Infineon IPD30N08S2L21ATMA1 technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IPD30N08S2L21ATMA1 Datasheet
Download the complete datasheet for Infineon IPD30N08S2L21ATMA1 to view detailed technical specifications.
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