N-channel MOSFET, 200V drain-source voltage, 34A continuous drain current, and 32mΩ Rds(on). Features a fast fall time of 4ns and turn-on delay of 11ns, with a turn-off delay of 21ns. This silicon, metal-oxide semiconductor FET offers a maximum power dissipation of 136W and operates from -55°C to 175°C. Designed for surface mounting in a TO-252-3 package, it is supplied on tape and reel and is RoHS compliant.
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Infineon IPD320N20N3GATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 34A |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.35nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 136W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 32mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 11ns |
| RoHS | Compliant |
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