N-Channel Power MOSFET, 100V Drain-Source Voltage, 27A Continuous Drain Current, and 33mΩ Max Rds(on). This silicon Metal-Oxide-Semiconductor FET features a 1-element design with a 1.57nF input capacitance and a 3V threshold voltage. Operating across a wide temperature range of -55°C to 175°C, it offers a maximum power dissipation of 58W. Designed for surface mounting in a TO-252 package, this RoHS compliant component is supplied on tape and reel.
PackageTO-252
MountingSurface Mount
Power58W
Quick Jump:
Technical Specifications
Infineon IPD33CN10NGATMA1 technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 27A |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.57nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 58W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 58W |
| Rds On Max | 33mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 11ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD33CN10NGATMA1 Datasheet
Download the complete datasheet for Infineon IPD33CN10NGATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
