The IPD40N03S4L08ATMA1 is a 40A N-Channel MOSFET from Infineon with a maximum drain to source voltage of 30V and a maximum power dissipation of 42W. It features a TO-252-3 package and is suitable for surface mount applications. The device operates over a temperature range of -55°C to 175°C and is compliant with AEC-Q101. It has a maximum input capacitance of 1.52nF and a maximum Rds on of 8.3mΩ.
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Infineon IPD40N03S4L08ATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.52nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 8.3mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 3ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPD40N03S4L08ATMA1 to view detailed technical specifications.
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