N-Channel Power MOSFET, 30V Vds, 50A continuous drain current, and 6.4mR maximum on-state resistance. Features a TO-252 package, 136W power dissipation, and operates from -55°C to 175°C. Includes 10ns turn-on delay and 15ns fall time. Halogen-free and RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IPD50N03S2L06ATMA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IPD50N03S2L06ATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5.1mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 2.5mm |
| Input Capacitance | 1.9nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 136W |
| Number of Channels | 1 |
| On-State Resistance | 6.4mR |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 136W |
| Rds On Max | 6.4mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 10ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPD50N03S2L06ATMA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
