N-Channel Power MOSFET, 30V Vds, 50A continuous drain current, and 6.4mR maximum on-state resistance. Features a TO-252 package, 136W power dissipation, and operates from -55°C to 175°C. Includes 10ns turn-on delay and 15ns fall time. Halogen-free and RoHS compliant.
PackageTO-252-3
PolarityN-CHANNEL
Power136W
Quick Jump:
Technical Specifications
Infineon IPD50N03S2L06ATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5.1mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 2.5mm |
| Input Capacitance | 1.9nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 136W |
| Number of Channels | 1 |
| On-State Resistance | 6.4mR |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 136W |
| Rds On Max | 6.4mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD50N03S2L06ATMA1 Datasheet
Download the complete datasheet for Infineon IPD50N03S2L06ATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
