N-channel power MOSFET, 30V drain-source breakdown voltage, 50A continuous drain current, and 5.5mΩ on-state resistance. Features a 3ns turn-on delay and 7ns fall time, with a maximum power dissipation of 56W. This silicon, metal-oxide semiconductor FET is housed in a TO-252 surface-mount package, operating from -55°C to 175°C. Designed for automotive applications and AEC-Q101 qualified.
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Infineon IPD50N03S4L06ATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Height | 2.41mm |
| Input Capacitance | 2.33nF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 56W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| On-State Resistance | 5.5mR |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Power Dissipation | 56W |
| Rds On Max | 5.5mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 3ns |
| Width | 6.22mm |
| RoHS | Compliant |
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