The IPD50N04S3-08 is a 40V, 50A MOSFET from Infineon, packaged in a TO-252-3. It features a maximum power dissipation of 68W and operates within a temperature range of -55°C to 175°C. The device is RoHS compliant and halogen free, making it suitable for a variety of applications. With a maximum Rds On of 7.5mR, this MOSFET is designed for high-speed switching applications.
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Infineon IPD50N04S3-08 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.35nF |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 68W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Rds On Max | 7.5mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 11ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPD50N04S3-08 to view detailed technical specifications.
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