The IPD50N04S309ATMA1 is a 40V, 50A N-Channel MOSFET in a TO-252-3 package, designed for surface mount applications. It features a maximum power dissipation of 63W and operates over a temperature range of -55°C to 175°C. The device is RoHS compliant and halogen free, but contains lead. It is part of the OptiMOS series and has a maximum Rds on of 9mR.
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Infineon IPD50N04S309ATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.75nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 63W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 9mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 11ns |
| RoHS | Compliant |
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