
The IPD50N04S408ATMA1 is a 40V 50A N-Channel MOSFET from Infineon, packaged in a TO-252-3 surface mount package. It features a maximum power dissipation of 46W and operates over a temperature range of -55°C to 175°C. The device is RoHS compliant and halogen free, but contains lead. It has a maximum dual supply voltage of 40V and a maximum Rds on of 7.9mR.
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Infineon IPD50N04S408ATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.78nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 46W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 7.9mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-On Delay Time | 5ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPD50N04S408ATMA1 to view detailed technical specifications.
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