The IPD50N04S410ATMA1 is a 40V 50A TO-252-3 OptiMOS MOSFET from Infineon with a maximum operating temperature range of -55°C to 175°C. It has a maximum power dissipation of 41W and a maximum dual supply voltage of 40V. The device is RoHS compliant and halogen free. It features an input capacitance of 1.43nF and a maximum Rds on resistance of 9.3mR. The MOSFET is packaged in a tape and reel package with 2500 units per reel.
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Infineon IPD50N04S410ATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 2.41mm |
| Input Capacitance | 1.43nF |
| Length | 6.73mm |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 41W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Rds On Max | 9.3mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 4ns |
| Turn-On Delay Time | 5ns |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPD50N04S410ATMA1 to view detailed technical specifications.
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