N-Channel Power MOSFET featuring 40V drain-source voltage and 50A continuous drain current. Offers low on-state resistance of 7.3mΩ at 10Vgs. Designed for high-efficiency switching with fast switching times, including a 4ns turn-on delay and 18ns fall time. Operates across a wide temperature range from -55°C to 175°C, with a maximum power dissipation of 46W. Packaged in a TO-252-3 surface-mount package, supplied on tape and reel.
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Infineon IPD50N04S4L08ATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 2.41mm |
| Input Capacitance | 2.34nF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 46W |
| On-State Resistance | 10.5mR |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Power Dissipation | 46W |
| Rds On Max | 7.3mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 4ns |
| Width | 6.22mm |
| RoHS | Compliant |
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