
The IPD50N06S409ATMA2 is a 60V 50A N-Channel MOSFET from Infineon, packaged in a TO-252-3 surface mount package. It operates over a temperature range of -55°C to 175°C. The device is RoHS compliant and halogen free. The maximum power dissipation is 71W, with a maximum Rds On of 9mR. It is suitable for automotive applications and compliant with AEC-Q101.
Sign in to ask questions about the Infineon IPD50N06S409ATMA2 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IPD50N06S409ATMA2 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 60V |
| Halogen Free | Halogen Free |
| Input Capacitance | 3.785nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 71W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 9mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPD50N06S409ATMA2 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
