The IPD50N06S409ATMA2 is a 60V 50A N-Channel MOSFET from Infineon, packaged in a TO-252-3 surface mount package. It operates over a temperature range of -55°C to 175°C. The device is RoHS compliant and halogen free. The maximum power dissipation is 71W, with a maximum Rds On of 9mR. It is suitable for automotive applications and compliant with AEC-Q101.
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
Infineon IPD50N06S409ATMA2 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 60V |
| Halogen Free | Halogen Free |
| Input Capacitance | 3.785nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 71W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 9mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD50N06S409ATMA2 Datasheet
Download the complete datasheet for Infineon IPD50N06S409ATMA2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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