The IPD50N06S4L-08 is a high-power N-channel MOSFET from Infineon, featuring a maximum drain current of 50A and a maximum drain-to-source voltage of 60V. It operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 71W. The device is packaged in a TO-252-3 plastic package and is lead-free and halogen-free. It is compliant with RoHS regulations and is part of the OptiMOS series.
PackageTO-252-3
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Technical Specifications
Infineon IPD50N06S4L-08 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Input Capacitance | 4.78nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 71W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Rds On Max | 7.8mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 9ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD50N06S4L-08 Datasheet
Download the complete datasheet for Infineon IPD50N06S4L-08 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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