N-channel Power MOSFET, 60V drain-source voltage, 50A continuous drain current. Features low on-resistance of 12mΩ at 10V Vgs and 2.2V gate threshold voltage. Packaged in a 3-pin DPAK (TO-252AA) surface-mount plastic case with a tab, measuring 6.5mm x 6.22mm x 2.3mm. Operates from -55°C to 175°C with 50W maximum power dissipation.
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Infineon IPD50N06S4L12ATMA1 technical specifications.
| Package Family Name | TO-252 |
| Package/Case | DPAK |
| Package Description | Deca Watt Package |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 6.22 |
| Package Height (mm) | 2.3 |
| Seated Plane Height (mm) | 2.51(Max) |
| Pin Pitch (mm) | 2.28 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-252AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | OptiMOS-T2 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±16V |
| Maximum Continuous Drain Current | 50A |
| Maximum Gate Threshold Voltage | 2.2V |
| Maximum Drain Source Resistance | 12@10VmOhm |
| Typical Gate Charge @ Vgs | 30@10VnC |
| Typical Gate Charge @ 10V | 30nC |
| Typical Input Capacitance @ Vds | 2220@25VpF |
| Maximum Power Dissipation | 50000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
| Cage Code | CG091 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
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