N-channel power MOSFET featuring 60V drain-source voltage and 50A continuous drain current. This surface-mount device offers a low on-state resistance of 12mΩ (typical 9.6mΩ) and a maximum power dissipation of 50W. Operating across a wide temperature range from -55°C to 175°C, it exhibits fast switching characteristics with turn-on delay of 6ns and fall time of 5ns. Packaged in TO-252, this single-element silicon Metal-oxide Semiconductor FET is supplied on tape and reel.
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Infineon IPD50N06S4L12ATMA2 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Resistance | 9.6mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 2.89nF |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| On-State Resistance | 12mR |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| Rds On Max | 12mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 6ns |
| Weight | 0.139332oz |
| RoHS | Compliant |
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