P-channel MOSFET, 40V drain-source breakdown voltage, 50A continuous drain current, and 12.6mΩ maximum on-state resistance. This silicon, metal-oxide semiconductor FET features a TO-252 package for surface mounting, with a maximum power dissipation of 58W and an operating temperature range of -55°C to 175°C. It offers fast switching characteristics with turn-on delay of 17ns and fall time of 28ns, and includes halogen-free and RoHS compliance.
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Infineon IPD50P04P413ATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | -40V |
| Drain to Source Resistance | 9.2mR |
| Drain to Source Voltage (Vdss) | -40V |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 2.5mm |
| Input Capacitance | 3.67nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | -40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 58W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| On-State Resistance | 12.6mR |
| Package Quantity | 2500 |
| Packaging | Cut Tape |
| Power Dissipation | 58W |
| Rds On Max | 12.6mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 17ns |
| RoHS | Compliant |
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