P-channel MOSFET, TO-252 package, featuring 40V drain-source voltage and 50A continuous drain current. Offers low on-state resistance of 10.6mΩ (typical 8.2mΩ) and a maximum power dissipation of 58W. Designed for surface mounting with a maximum operating temperature of 175°C. Includes fast switching characteristics with a turn-on delay of 12ns and fall time of 39ns.
PackageTO-252-3
MountingSurface Mount
Power58W
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Technical Specifications
Infineon IPD50P04P4L11ATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Resistance | 8.2mR |
| Drain to Source Voltage (Vdss) | -40V |
| Fall Time | 39ns |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Input Capacitance | 3.9nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | -40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 58W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 10.6mR |
| Package Quantity | 2500 |
| Packaging | Cut Tape |
| Power Dissipation | 58W |
| Rds On Max | 10.6mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 46ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD50P04P4L11ATMA1 Datasheet
Download the complete datasheet for Infineon IPD50P04P4L11ATMA1 to view detailed technical specifications.
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