N-channel silicon power MOSFET featuring 500V drain-to-source breakdown voltage and 280mΩ on-state resistance. This Metal-oxide Semiconductor FET offers a continuous drain current of 13A and a maximum power dissipation of 92W. Designed for efficient switching, it exhibits a turn-on delay time of 8ns and a fall time of 7.6ns. Packaged in a TO-252-3 (DPAK-3/2) surface-mount package, this RoHS compliant component operates from -55°C to 150°C.
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Infineon IPD50R280CEAUMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 280mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 7.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 2.41mm |
| Input Capacitance | 773pF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 92W |
| On-State Resistance | 280mR |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 92W |
| Rds On Max | 280mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ CE |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 8ns |
| Width | 6.22mm |
| RoHS | Compliant |
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