N-Channel Power MOSFET, 500V Drain to Source Breakdown Voltage, 9.9A Continuous Drain Current, and 380mR On-State Resistance. This silicon, Metal-oxide Semiconductor FET features a TO-252-3 package, 7.2ns turn-on delay, and 8.6ns fall time. With a maximum power dissipation of 98W and an operating temperature range of -55°C to 150°C, it is RoHS compliant and halogen-free.
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Infineon IPD50R380CEAUMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 9.9A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 350mR |
| Fall Time | 8.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 2.55mm |
| Input Capacitance | 584pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 98W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 380mR |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 73W |
| Rds On Max | 380mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ CE |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 7.2ns |
| RoHS | Compliant |
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