N-channel power MOSFET featuring 550V drain-source breakdown voltage and 9A continuous drain current. Offers 399mΩ Rds On resistance and 83W power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in a TO-252-3 surface-mount case, this silicon metal-oxide semiconductor FET is RoHS compliant.
PackageTO-252-3
PolarityN-CHANNEL
Power83W
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Technical Specifications
Infineon IPD50R399CP technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Breakdown Voltage | 550V |
| Drain to Source Resistance | 399mR |
| Drain to Source Voltage (Vdss) | 550V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.413mm |
| Input Capacitance | 890pF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 83W |
| Rds On Max | 399mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 35ns |
| Width | 6.223mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD50R399CP Datasheet
Download the complete datasheet for Infineon IPD50R399CP to view detailed technical specifications.
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