Power Field-Effect Transistor, 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2
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Infineon IPD50R3K0CEAUMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 1.7A |
| Drain to Source Voltage (Vdss) | 500V |
| Gate to Source Voltage (Vgs) | 30V |
| Halogen Free | Halogen Free |
| Height | 2.41mm |
| Input Capacitance | 84pF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Dual Supply Voltage | 500V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 18W |
| Mount | Surface Mount |
| On-State Resistance | 3R |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 3R |
| RoHS Compliant | Yes |
| Series | CoolMOS™ CE |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 7.3ns |
| Width | 6.22mm |
| RoHS | Compliant |
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