N-channel MOSFET with 500V drain-source breakdown voltage and 7.6A continuous drain current. Features 500mΩ drain-source resistance (Rds On Max) and 57W maximum power dissipation. Designed for surface mounting in a TO-252-3 (DPAK-2) package, this component offers fast switching with turn-on delay time of 6ns and fall time of 12ns. Operating temperature range spans from -55°C to 150°C.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power57W
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Technical Specifications
Infineon IPD50R500CEATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 7.6A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 500mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.4mm |
| Input Capacitance | 433pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 57W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 57W |
| Rds On Max | 500mR |
| RoHS Compliant | No |
| Series | CoolMOS™ CE |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 6ns |
| Weight | 0.139332oz |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon IPD50R500CEATMA1 Datasheet
Download the complete datasheet for Infineon IPD50R500CEATMA1 to view detailed technical specifications.
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