N-channel silicon power MOSFET featuring 500V drain-source breakdown voltage and 500mΩ on-state resistance. This Metal-oxide Semiconductor FET offers a continuous drain current of 7.6A and a maximum power dissipation of 57W. Designed for TO-252-3 (DPAK-3/2) packaging, it boasts fast switching speeds with a 6ns turn-on delay and 12ns fall time. Operating across a wide temperature range of -55°C to 150°C, this RoHS compliant component is supplied on tape and reel.
PackageTO-252-3
PolarityN-CHANNEL
Power57W
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Technical Specifications
Infineon IPD50R500CEAUMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 7.6A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 500mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 433pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 500V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 57W |
| On-State Resistance | 500mR |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 57W |
| Rds On Max | 500mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 6ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD50R500CEAUMA1 Datasheet
Download the complete datasheet for Infineon IPD50R500CEAUMA1 to view detailed technical specifications.
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