The IPD50R520CPBTMA1 is a surface mount N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum drain to source voltage of 500V and a continuous drain current of 7.1A. The device has an on-state resistance of 520mR and a power dissipation of 66W. It is packaged in a TO-252 package and is available in quantities of 2500 on tape and reel.
PackageTO-252
MountingSurface Mount
Power66W
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Technical Specifications
Infineon IPD50R520CPBTMA1 technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 7.1A |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 500V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 520mR |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Power Dissipation | 66W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 35ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD50R520CPBTMA1 Datasheet
Download the complete datasheet for Infineon IPD50R520CPBTMA1 to view detailed technical specifications.
No datasheet is available for this part.