Power Field-Effect Transistor, 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2
Checking distributor stock and pricing after the page loads.
Infineon IPD50R800CEBTMA1 technical specifications.
| Continuous Drain Current (ID) | 5A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 40W |
| RoHS Compliant | Yes |
| RoHS | Compliant |
No datasheet is available for this part.
