N-channel Power MOSFET featuring CoolMOS CE technology, designed for automotive applications. This single-element transistor boasts a 500V drain-source voltage and a 4.3A continuous drain current. Housed in a 3-pin DPAK (TO-252AA) surface-mount package with gull-wing leads, it offers a low drain-source on-resistance of 950mΩ at 13V. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 34W.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Infineon IPD50R950CE technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-252 |
| Package/Case | DPAK |
| Package Description | Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.73(Max) |
| Package Width (mm) | 6.22(Max) |
| Package Height (mm) | 2.41(Max) |
| Seated Plane Height (mm) | 2.56(Max) |
| Pin Pitch (mm) | 2.29 |
| Mounting | Surface Mount |
| Jedec | TO-252AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | CoolMOS CE |
| Maximum Drain Source Voltage | 500V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 4.3A |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Drain Source Resistance | 950@13VmOhm |
| Typical Gate Charge @ Vgs | 10.5@10VnC |
| Typical Gate Charge @ 10V | 10.5nC |
| Typical Input Capacitance @ Vds | 231@100VpF |
| Maximum Power Dissipation | 34000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon IPD50R950CE Datasheet
Download the complete datasheet for Infineon IPD50R950CE to view detailed technical specifications.
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