
N-channel MOSFET, 100V Vdss, 60A continuous drain current, and 12mΩ Rds On. Features a TO-252 package for surface mounting, 94W power dissipation, and operates from -55°C to 175°C. Includes fast switching times with a 4ns turn-on delay and 21ns fall time, and 3.17nF input capacitance. This component is RoHS compliant and Halogen Free.
Infineon IPD60N10S4L12ATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Resistance | 9.8mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Input Capacitance | 3.17nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 94W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| On-State Resistance | 12mR |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 94W |
| Rds On Max | 12mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 4ns |
| Weight | 0.139332oz |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPD60N10S4L12ATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
