This device is a 600 V N-channel superjunction power MOSFET in Infineon's CoolMOS™ P7 family. It is designed to combine high energy efficiency with ease of use, with 180 mΩ maximum RDS(on) at 10 V gate drive and typical total gate charge of 25 nC. The device is housed in a DPAK surface-mount package with 3 pins and supports up to 18 A continuous drain current, 53 A pulsed drain current, and 72 W maximum power dissipation. Its operating junction temperature range is -40 °C to 150 °C, and the product page highlights low gate charge, low stored energy in COSS, and an integrated gate resistor.
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| Number of Terminals | 2 |
| Min Operating Temperature | -40 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252 |
| Number of Elements | 1 |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
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