N-channel power MOSFET, 600V drain-source breakdown voltage, 1.4 ohm Rds On, and 3.2A continuous drain current. Features a TO-252 package, 150°C max operating temperature, and 28.4W power dissipation. This silicon metal-oxide semiconductor FET offers 8ns turn-on delay and 40ns turn-off delay. RoHS compliant and halogen-free.
PackageTO-252-3
PolarityN-CHANNEL
Power28.4W
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Technical Specifications
Infineon IPD60R1K4C6ATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 1.26R |
| Drain to Source Voltage (Vdss) | 600V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 2.41mm |
| Input Capacitance | 200pF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 28.4W |
| Nominal Vgs | 3V |
| Number of Elements | 1 |
| On-State Resistance | 1.4R |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 28.4W |
| Rds On Max | 1.4R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ C6 |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 8ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD60R1K4C6ATMA1 Datasheet
Download the complete datasheet for Infineon IPD60R1K4C6ATMA1 to view detailed technical specifications.
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