N-channel power MOSFET, 600V drain-source breakdown voltage, 1.4 ohm Rds On, and 3.2A continuous drain current. Features a TO-252 package, 150°C max operating temperature, and 28.4W power dissipation. This silicon metal-oxide semiconductor FET offers 8ns turn-on delay and 40ns turn-off delay. RoHS compliant and halogen-free.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IPD60R1K4C6ATMA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IPD60R1K4C6ATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 1.26R |
| Drain to Source Voltage (Vdss) | 600V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 2.41mm |
| Input Capacitance | 200pF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 28.4W |
| Nominal Vgs | 3V |
| Number of Elements | 1 |
| On-State Resistance | 1.4R |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 28.4W |
| Rds On Max | 1.4R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ C6 |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 8ns |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPD60R1K4C6ATMA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
